Simulation of Nanometer MOS-Devices with MINIMOS

In the last decade two dimensional device simulation based on the Drift-Diffusion (DD) model has been widely used and is still of remarkable importance for industrial purposes. When device size shrinks below one micron the electric field often becomes very high and undergoes rapid changes over a small distance. In this situation the DD model begins to fail, while the Monte-Carlo (MC) method being based on more accurate physical models is capable to describe the occuring effects. On the other hand for low field transport or in regions with retarding fields the DD model with adequate parameter models has proven to be sufficiently accurate. In terms of computational effort the solution of the DD model can be seen as very efficient compared to a MC simulation. For these reasoiis we have tried to find a coupling scheme for MC and DD model which is rigouros in a physical sense and cheap in terms of demands on computational resources.